| PART |
Description |
Maker |
| M57729SH 57729SH |
490-512MHz 12.5V /30W /FM MOBILE RADIO
490-512MHz 12.5V,30W,FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67749SH |
RF POWER MODULE 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| SDA-90811-9001 0908112131 SD-90811-010 90811-2131 |
1.00mm (.039") Pitch Mobi-Mate Handset Connector, 16 Circuit, SMT, Un- switched RF
1.00mm (.039) Pitch Mobi-Mate Handset Connector, 16 Circuit, SMT, Un- switched RF
|
Molex Electronics Ltd.
|
| NTE365 |
Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz
|
NTE[NTE Electronics]
|
| NTE366 |
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz
|
NTE[NTE Electronics]
|
| IXFH26N49Q |
26 A, 490 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
| NX7437AG-AA NX7437BF-AA |
1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| C391 C391PB |
1200V, 490A phase control single thyristor
Phase Control SCR 490 Amperes Average 2400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
